4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon
SICOI (Silicon Carbide on Insulator) wafers represent a high-performance semiconductor substrate material that combines the exceptional physical properties of silicon carbide (SiC) with the electrical isolation advantages of an insulating layer (such as SiO₂ or Si₃N₄). The SICOI structure typically consists of a SiC single-crystal layer, an insulating layer, and a supporting substrate (e.g., Si or SiC). This configuration finds extensive applications in high-power, high-frequency, and high-temperature electronic devices, as well as in RF (Radio Frequency) and MEMS sensor fields.
Compared to conventional SiC wafers, SICOI wafers significantly reduce parasitic capacitance and leakage current through the incorporation of an insulating layer, thereby enhancing device operating frequency and energy efficiency. This technology is particularly suited for applications requiring high voltage resistance, low loss, and superior thermal performance, such as electric vehicles, 5G communications, and aerospace electronics.
SICOI Wafers Key Features
| Feature Category | Specific Parameters/Performance | Technical Advantages |
| Material Structure | SiC single-crystal layer (4H/6H-SiC) + insulating layer (SiO₂/Si₃N₄) + supporting substrate (Si/SiC) | Enables electrical isolation and reduces parasitic effects |
| Electrical Performance | High breakdown field strength (>3 MV/cm), low dielectric loss | Ideal for high-frequency and high-voltage devices |
| Thermal Performance | High thermal conductivity (4.9 W/cm·K), high-temperature resistance (>500°C) | Excellent heat dissipation capability, suitable for high-temperature environments |
| Mechanical Performance | High hardness (Mohs hardness 9.5), low thermal expansion coefficient | Resists mechanical stress and enhances device reliability |
| Surface Quality | Atomically flat surface (Ra <0.2 nm) | Optimizes epitaxial growth quality and minimizes defects |
| Insulation Performance | High insulation resistance (>10¹⁴ Ω·cm), low leakage current | Suitable for RF and power devices requiring high isolation |
| Size and Customization | Supports 4/6/8-inch wafers with customizable thickness (SiC layer: 1-100 μm, insulating layer: 0.1-10 μm) | Meets diverse application requirements |
SICOI Wafers Primary Applications
| Application Field | Specific Scenarios | Core Advantages |
| High-Power Electronics | EV inverters, fast-charging stations, industrial power modules | High voltage resistance and low loss improve energy efficiency |
| RF Devices | 5G base station power amplifiers (PAs), millimeter-wave RF frontends | Low parasitic capacitance enables high-frequency operation with minimal loss |
| MEMS Sensors | High-temperature pressure sensors, inertial navigation devices | Withstands high temperatures and radiation, suitable for harsh environments |
| Aerospace | Aircraft power systems, satellite communication equipment | High reliability and extreme temperature resistance |
| Smart Grid | High-voltage direct current (HVDC) transmission, solid-state circuit breakers | High insulation properties reduce energy loss |
| Optoelectronics | UV LEDs, laser diode substrates | High lattice matching improves device performance |
The preparation process of 4H-SiCOI
The fabrication process of 4H-SiCOI and the microresonators with highlighted features.
- a Fabrication process of pristine 4H-SiCOI material platform.
- b Photograph of a 4-inch wafer-scale 4H-SiCOI substrate fabricated using bonding and thinning method, the failure region is marked.
- c Total thickness variation of the 4H-SiCOI substrate.
- d Image of a 4H-SiCOI die.
- e Flowchart of fabricating a SiC microdisk resonator.
- f A scanning electron micrograph (SEM) of the fabricated microdisk resonator.
- g Zoom-in SEM image of the sidewall of the resonator. Inset, the atomic force micrograph (AFM) scan of the top surface of the resonator (Scale bar = 1 μm).
- h Side view SEM image of the fabricated resonator with parabolic-like shaped upper surface.
SICOI Wafers Q&A
1. Q: What is SICOI wafer?
A: SICOI (Silicon Carbide on Insulator) wafer is an advanced semiconductor substrate combining SiC's high-performance properties with an insulating layer for enhanced electrical isolation in power and RF devices.
2. Q: What are the advantages of SICOI wafers?
A: SICOI wafers offer lower parasitic capacitance, higher breakdown voltage, and better thermal management compared to standard SiC wafers, ideal for 5G and EV applications.
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